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SI1012X-T1-GE3

SI1012X-T1-GE3

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Part No :

SI1012X-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 500MA SC89-3
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 05 - May 09 2024
DataSheet
SI1012X-T1-GE3 PDF
Availability
2568 pieces
Unit Price
$0.54000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of SI1012X-T1-GE3 is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

SI1012X-T1-GE3 Specifications
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.75 nC @ 4.5 V
Vgs (Max):±6V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):250mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-89-3
Package / Case:SC-89, SOT-490
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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