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SIS438DN-T1-GE3

SIS438DN-T1-GE3

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Part No :

SIS438DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 16A PPAK 1212-8
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 19 - May 23 2024
DataSheet
SIS438DN-T1-GE3 PDF
Availability
76 pieces
Unit Price
$0.89000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of SIS438DN-T1-GE3 is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

SIS438DN-T1-GE3 Specifications
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 10 V
FET Feature:-
Power Dissipation (Max):3.5W (Ta), 27.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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