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EPC2010C

EPC2010C

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Part No :

EPC2010C

Manufacturer
EPC
Description
GANFET N-CH 200V 22A DIE OUTLINE
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 03 - May 07 2024
DataSheet
EPC2010C PDF
Availability
11234 pieces
Unit Price
$6.56000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of EPC2010C is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

EPC2010C Specifications
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:25mOhm @ 12A, 5V
Vgs(th) (Max) @ Id:2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:5.3 nC @ 5 V
Vgs (Max):+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds:540 pF @ 100 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Die Outline (7-Solder Bar)
Package / Case:Die
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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