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EPC2010C

EPC2010C

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Part No :

EPC2010C

Manufacturer
EPC
Description
GANFET N-CH 200V 22A DIE OUTLINE
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jun 30 - Jul 04 2025
DataSheet
EPC2010C PDF
Availability
11234 pieces
Unit Price
$6.56000

Current price of EPC2010C is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

EPC2010C Specifications
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:25mOhm @ 12A, 5V
Vgs(th) (Max) @ Id:2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:5.3 nC @ 5 V
Vgs (Max):+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds:540 pF @ 100 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Die Outline (7-Solder Bar)
Package / Case:Die
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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