G3R20MT12N

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Part No :

G3R20MT12N

Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH 105A SOT227
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jun 30 - Jul 04 2025
DataSheet
G3R20MT12N PDF
Availability
84 pieces
Unit Price
$53.25000

Current price of G3R20MT12N is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:G3R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:105A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:24mOhm @ 60A, 15V
Vgs(th) (Max) @ Id:2.69V @ 15mA
Gate Charge (Qg) (Max) @ Vgs:219 nC @ 15 V
Vgs (Max):+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:5873 pF @ 800 V
FET Feature:-
Power Dissipation (Max):365W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227
Package / Case:SOT-227-4, miniBLOC
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