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Type | Description |
---|---|
Series: | G3R™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 105A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 15V |
Rds On (Max) @ Id, Vgs: | 24mOhm @ 60A, 15V |
Vgs(th) (Max) @ Id: | 2.69V @ 15mA |
Gate Charge (Qg) (Max) @ Vgs: | 219 nC @ 15 V |
Vgs (Max): | +20V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: | 5873 pF @ 800 V |
FET Feature: | - |
Power Dissipation (Max): | 365W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Supplier Device Package: | SOT-227 |
Package / Case: | SOT-227-4, miniBLOC |
SIC MOSFET N-CH 105A SOT227