G2R120MT33J

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Part No :: G2R120MT33J

Manufacturer: GeneSiC Semiconductor

Description: SIC MOSFET N-CH TO263-7

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jun 30 - Jul 04 2025

DataSheet: G2R120MT33J PDF

Availability: 82 pieces

Unit Price: ~~$95.63000~~

Current price of G2R120MT33J is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

G2R120MT33J Specifications

Type	Description
Series:	G2R™
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	3300 V
Current - Continuous Drain (Id) @ 25°C:	35A
Drive Voltage (Max Rds On, Min Rds On):	20V
Rds On (Max) @ Id, Vgs:	156mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	145 nC @ 20 V
Vgs (Max):	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:	3706 pF @ 1000 V
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-263-7
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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