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IPN80R1K2P7ATMA1

IPN80R1K2P7ATMA1

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Part No :

IPN80R1K2P7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 800V 4.5A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2024
DataSheet
IPN80R1K2P7ATMA1 PDF
Availability
5490 pieces
Unit Price
$1.08000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of IPN80R1K2P7ATMA1 is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

IPN80R1K2P7ATMA1 Specifications
Type Description
Series:CoolMOS™ P7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id:3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 500 V
FET Feature:-
Power Dissipation (Max):6.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:TO-261-3
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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