IPN50R1K4CEATMA1

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Part No :: IPN50R1K4CEATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 500V 4.8A SOT223

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jun 30 - Jul 04 2025

DataSheet: IPN50R1K4CEATMA1 PDF

Availability: 204 pieces

Unit Price: ~~$0.49000~~

Current price of IPN50R1K4CEATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPN50R1K4CEATMA1 Specifications

Type	Description
Series:	CoolMOS™ CE
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	500 V
Current - Continuous Drain (Id) @ 25°C:	4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	13V
Rds On (Max) @ Id, Vgs:	1.4Ohm @ 900mA, 13V
Vgs(th) (Max) @ Id:	3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs:	8.2 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	178 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	5W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-SOT223
Package / Case:	SOT-223-3

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