CSD19536KTT

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Part No :

CSD19536KTT

Manufacturer
Texas Instruments
Description
MOSFET N-CH 100V 200A DDPAK
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 20 - Jul 24 2025
DataSheet
CSD19536KTT PDF
Availability
1715 pieces
Unit Price
$5.47000

Current price of CSD19536KTT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:NexFET™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:200A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:153 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12000 pF @ 50 V
FET Feature:-
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DDPAK/TO-263-3
Package / Case:TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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  • Delivery date: usually 2 to 7 working days.
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