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G2R1000MT17J

G2R1000MT17J

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Part No :

G2R1000MT17J

Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH 3A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jun 30 - Jul 04 2025
DataSheet
G2R1000MT17J PDF
Availability
6 pieces
Unit Price
$6.17000

Current price of G2R1000MT17J is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

G2R1000MT17J Specifications
Type Description
Series:G2R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1700 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id:4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:139 pF @ 1000 V
FET Feature:-
Power Dissipation (Max):54W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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