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G2R1000MT17J

G2R1000MT17J

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Part No :

G2R1000MT17J

Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH 3A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 03 - May 07 2024
DataSheet
G2R1000MT17J PDF
Availability
6 pieces
Unit Price
$6.17000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of G2R1000MT17J is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

G2R1000MT17J Specifications
Type Description
Series:G2R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1700 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id:4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:139 pF @ 1000 V
FET Feature:-
Power Dissipation (Max):54W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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  • Delivery date: usually 2 to 7 working days.
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