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Type | Description |
---|---|
Series: | POWER MOS 7® |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800 V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 240mOhm @ 15.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 160 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 4670 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 565W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | T-MAX™ [B2] |
Package / Case: | TO-247-3 Variant |
MOSFET N-CH 800V 31A T-MAX