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Type | Description |
---|---|
Series: | G3R™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 15V |
Rds On (Max) @ Id, Vgs: | 90mOhm @ 20A, 15V |
Vgs(th) (Max) @ Id: | 2.69V @ 7.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 54 nC @ 15 V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 1560 pF @ 800 V |
FET Feature: | - |
Power Dissipation (Max): | 224W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263-7 |
Package / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
RES TEMP SENS 390 OHM 5% 1/16W
SIC MOSFET N-CH 42A TO263-7
MODULE FRAME MH-24 F 6SLOTS HB24
3.81 MM TERMINAL BLOCK, DOUBLE L