TP65H070LDG

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Part No :: TP65H070LDG

Manufacturer: Transphorm

Description: GANFET N-CH 650V 25A 3PQFN

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 05 - Jul 09 2025

DataSheet: TP65H070LDG PDF

Availability: 673 pieces

Unit Price: ~~$12.98000~~

Current price of TP65H070LDG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

TP65H070LDG Specifications

Type	Description
Series:	TP65H070L
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:	4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:	9.3 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	600 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	96W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	3-PQFN (8x8)
Package / Case:	3-PowerDFN

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