Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of G3R350MT12D is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]
Type | Description |
---|---|
Series: | G3R™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 15V |
Rds On (Max) @ Id, Vgs: | 420mOhm @ 4A, 15V |
Vgs(th) (Max) @ Id: | 2.69V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs: | 12 nC @ 15 V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 334 pF @ 800 V |
FET Feature: | - |
Power Dissipation (Max): | 74W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
HOT MIRROR ASMBLY PARABOLIC LAMP
SIC MOSFET N-CH 11A TO247-3
FRAME FIXED SZ3 FOR 2MOD
REPLACEMENT NON-FERROUS PROBE