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G3R30MT12J

G3R30MT12J

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Part No :

G3R30MT12J

Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH 96A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2024
DataSheet
G3R30MT12J PDF
Availability
0 pieces
Unit Price
$23.23000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of G3R30MT12J is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

G3R30MT12J Specifications
Type Description
Series:G3R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:96A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:36mOhm @ 50A, 15V
Vgs(th) (Max) @ Id:2.69V @ 12mA
Gate Charge (Qg) (Max) @ Vgs:155 nC @ 15 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:3901 pF @ 800 V
FET Feature:-
Power Dissipation (Max):459W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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