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Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 180mOhm @ 10A, 8V |
Vgs(th) (Max) @ Id: | 2.6V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: | 6.2 nC @ 4.5 V |
Vgs (Max): | ±18V |
Input Capacitance (Ciss) (Max) @ Vds: | 720 pF @ 480 V |
FET Feature: | - |
Power Dissipation (Max): | 81W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PQFN (8x8) |
Package / Case: | 3-PowerDFN |
WIRE MARKER, 0.75 IN H
GANFET N-CH 650V 16A PQFN
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