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Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | - |
Technology: | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 25mOhm @ 50A |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 7209 pF @ 800 V |
FET Feature: | - |
Power Dissipation (Max): | 583W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247AB |
Package / Case: | TO-247-3 |
TRANS SJT 1200V 100A TO247AB
CONN RING CIRC 16-22AWG #6 CRIMP
SC-5 SUPER SOLAR CELLS (3-PACK)
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