GA10JT12-263

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Part No :: GA10JT12-263

Manufacturer: GeneSiC Semiconductor

Description: TRANS SJT 1200V 25A

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: May 18 - May 22 2024

DataSheet: GA10JT12-263 PDF

Availability: 170 pieces

Unit Price: ~~$20.74000~~

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of GA10JT12-263 is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

GA10JT12-263 Specifications

Type	Description
Series:	-
Package:	Tube
Part Status:	Active
FET Type:	-
Technology:	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	120mOhm @ 10A
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	1403 pF @ 800 V
FET Feature:	-
Power Dissipation (Max):	170W (Tc)
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	-
Package / Case:	-

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