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Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Rds On (Max) @ Id, Vgs: | 34mOhm @ 30A, 8V |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: | 2260pF @ 100V |
Power - Max: | 470W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | Module |
Supplier Device Package: | Module |
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