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TP65H070LSG-TR

TP65H070LSG-TR

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Part No :

TP65H070LSG-TR

Manufacturer
Transphorm
Description
GANFET N-CH 650V 25A PQFN88
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 20 - May 24 2024
DataSheet
TP65H070LSG-TR PDF
Availability
498 pieces
Unit Price
$12.98000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of TP65H070LSG-TR is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

TP65H070LSG-TR Specifications
Type Description
Series:TP65H070L
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:9.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 400 V
FET Feature:-
Power Dissipation (Max):96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PQFN (8x8)
Package / Case:3-PowerDFN
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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