SI2336DS-T1-BE3

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Part No :: SI2336DS-T1-BE3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 30V 4.3A/5.2A SOT23

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 20 - Jul 24 2025

DataSheet: SI2336DS-T1-BE3 PDF

Availability: 2995 pieces

Unit Price: ~~$0.53000~~

Current price of SI2336DS-T1-BE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SI2336DS-T1-BE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	4.3A (Ta), 5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	42mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15 nC @ 8 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	560 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	1.25W (Ta), 1.8W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3 (TO-236)
Package / Case:	TO-236-3, SC-59, SOT-23-3

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