IMBF170R650M1XTMA1

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Part No :: IMBF170R650M1XTMA1

Manufacturer: IR (Infineon Technologies)

Description: SICFET N-CH 1700V 7.4A TO263-7

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 21 - Jul 25 2025

DataSheet: IMBF170R650M1XTMA1 PDF

Availability: 746 pieces

Unit Price: ~~$7.28000~~

Current price of IMBF170R650M1XTMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IMBF170R650M1XTMA1 Specifications

Type	Description
Series:	CoolSiC™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1700 V
Current - Continuous Drain (Id) @ 25°C:	7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	12V, 15V
Rds On (Max) @ Id, Vgs:	650mOhm @ 1.5A, 15V
Vgs(th) (Max) @ Id:	5.7V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs:	8 nC @ 12 V
Vgs (Max):	+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:	422 pF @ 1000 V
FET Feature:	-
Power Dissipation (Max):	88W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	-
Supplier Device Package:	PG-TO263-7
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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