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TP65H035G4WS

TP65H035G4WS

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Part No :

TP65H035G4WS

Manufacturer
Transphorm
Description
GANFET N-CH 650V 46.5A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 21 - May 25 2024
DataSheet
TP65H035G4WS PDF
Availability
503 pieces
Unit Price
$17.65000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of TP65H035G4WS is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

TP65H035G4WS Specifications
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 0 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 400 V
FET Feature:-
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 150°C
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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