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Type | Description |
---|---|
Series: | GigaMOS™, HiPerFET™, TrenchT2™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 168A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 8.3mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: | 378 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 28000 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 600W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 24-SMPD |
Package / Case: | 24-PowerSMD, 21 Leads |
FIXED IND 10UH 1.5A 255.6 MOHM
18G 1.0" HP SERIES PTFE LINED TI
CORD, 10/3 SJTW 50' YELLOW LE SW
MOSFET N-CH 200V 168A 24SMPD