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NSBC123JPDP6T5G

NSBC123JPDP6T5G

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Part No :

NSBC123JPDP6T5G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS PREBIAS 2NPN 50V SOT963
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Shipped from
HK warehouse
Expected Shipping Date
Jul 01 - Jul 05 2025
DataSheet
NSBC123JPDP6T5G PDF
Availability
0 pieces
Unit Price
$0.06029

Current price of NSBC123JPDP6T5G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

NSBC123JPDP6T5G Specifications
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):2.2kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:339mW
Mounting Type:Surface Mount
Package / Case:SOT-963
Supplier Device Package:SOT-963
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