RN1910FE,LF(CT

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Part No :: RN1910FE,LF(CT

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: TRANS 2NPN PREBIAS 0.1W ES6

Catalog: Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Shipped from: HK warehouse

Expected Shipping Date: Jun 30 - Jul 04 2025

DataSheet: RN1910FE,LF(CT PDF

Availability: 3730 pieces

Unit Price: ~~$0.28000~~

Current price of RN1910FE,LF(CT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

RN1910FE,LF(CT Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
Transistor Type:	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7kOhms
Resistor - Emitter Base (R2):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	250MHz
Power - Max:	100mW
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	ES6

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