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NSBA113EDXV6T1G

NSBA113EDXV6T1G

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Part No :

NSBA113EDXV6T1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS 2PNP PREBIAS 0.25W SOT563
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Shipped from
HK warehouse
Expected Shipping Date
Jul 07 - Jul 11 2025
DataSheet
NSBA113EDXV6T1G PDF
Availability
0 pieces
Unit Price
$0.11823

Current price of NSBA113EDXV6T1G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

NSBA113EDXV6T1G Specifications
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
Transistor Type:2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):1kOhms
Resistor - Emitter Base (R2):1kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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