RN1961(TE85L,F)

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Part No :: RN1961(TE85L,F)

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: TRANS 2NPN PREBIAS 0.2W US6

Catalog: Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Shipped from: HK warehouse

Expected Shipping Date: Jul 07 - Jul 11 2025

DataSheet: RN1961(TE85L,F) PDF

Availability: 2545 pieces

Unit Price: ~~$0.48000~~

Current price of RN1961(TE85L,F) is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

RN1961(TE85L,F) Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
Transistor Type:	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7kOhms
Resistor - Emitter Base (R2):	4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	250MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	US6

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