HN1B04FE-GR,LF

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Part No :

HN1B04FE-GR,LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS NPN/PNP 50V 0.15A ES6
Catalog
Transistors - Bipolar (BJT) - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Jul 02 - Jul 06 2025
DataSheet
HN1B04FE-GR,LF PDF
Availability
1870 pieces
Unit Price
$0.31000

Current price of HN1B04FE-GR,LF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):150mA
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
Power - Max:100mW
Frequency - Transition:80MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:ES6
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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