MT3S111P(TE12L,F)

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Part No :: MT3S111P(TE12L,F)

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: RF TRANS NPN 6V 8GHZ PW-MINI

Catalog: Transistors - Bipolar (BJT) - RF

Shipped from: HK warehouse

Expected Shipping Date: Aug 01 - Aug 05 2025

DataSheet: MT3S111P(TE12L,F) PDF

Availability: 7857 pieces

Unit Price: ~~$0.89000~~

Current price of MT3S111P(TE12L,F) is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

MT3S111P(TE12L,F) Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	6V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	1.25dB @ 1GHz
Gain:	10.5dB
Power - Max:	1W
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 30mA, 5V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	PW-MINI

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