MT3S111P(TE12L,F)

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Part No :

MT3S111P(TE12L,F)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
RF TRANS NPN 6V 8GHZ PW-MINI
Catalog
Transistors - Bipolar (BJT) - RF
Shipped from
HK warehouse
Expected Shipping Date
Jul 03 - Jul 07 2025
DataSheet
MT3S111P(TE12L,F) PDF
Availability
7857 pieces
Unit Price
$0.89000

Current price of MT3S111P(TE12L,F) is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):6V
Frequency - Transition:8GHz
Noise Figure (dB Typ @ f):1.25dB @ 1GHz
Gain:10.5dB
Power - Max:1W
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
Current - Collector (Ic) (Max):100mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PW-MINI
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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