MT3S113TU,LF

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Part No :: MT3S113TU,LF

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: RF TRANS NPN 5.3V 11.2GHZ UFM

Catalog: Transistors - Bipolar (BJT) - RF

Shipped from: HK warehouse

Expected Shipping Date: Jul 28 - Aug 01 2025

DataSheet: MT3S113TU,LF PDF

Availability: 5800 pieces

Unit Price: ~~$0.64000~~

Current price of MT3S113TU,LF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

MT3S113TU,LF Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	5.3V
Frequency - Transition:	11.2GHz
Noise Figure (dB Typ @ f):	1.45dB @ 1GHz
Gain:	12.5dB
Power - Max:	900mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 30mA, 5V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-SMD, Flat Lead
Supplier Device Package:	UFM

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