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NSVDTC123JET1G

NSVDTC123JET1G

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Part No :

NSVDTC123JET1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS NPN 50V 0.1A SC75
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Shipped from
HK warehouse
Expected Shipping Date
Aug 01 - Aug 05 2025
DataSheet
NSVDTC123JET1G PDF
Availability
0 pieces
Unit Price
$0.06296

Current price of NSVDTC123JET1G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

NSVDTC123JET1G Specifications
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75, SOT-416
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  • Delivery date: usually 2 to 7 working days.
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