2N6667

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Part No :: 2N6667

Manufacturer: NTE Electronics, Inc.

Description: T-PNP SI-GEN PUR AMP

Catalog: Transistors - Bipolar (BJT) - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 05 - Jul 09 2025

DataSheet: 2N6667 PDF

Availability: 708 pieces

Unit Price: ~~$1.56000~~

Current price of 2N6667 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

2N6667 Specifications

Type	Description
Series:	-
Package:	Bag
Part Status:	Active
Transistor Type:	PNP - Darlington
Current - Collector (Ic) (Max):	10 A
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	3V @ 100mA, 10A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	1000 @ 5A, 3V
Power - Max:	2 W
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

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Delivery date: usually 2 to 7 working days.
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