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MJD122-1G

MJD122-1G

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Part No :

MJD122-1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS NPN DARL 100V 8A DPAK
Catalog
Transistors - Bipolar (BJT) - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 05 - Aug 09 2025
DataSheet
MJD122-1G PDF
Availability
0 pieces
Unit Price
$0.37100

Current price of MJD122-1G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

MJD122-1G Specifications
Type Description
Series:-
Package:Tube
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:4V @ 80mA, 8A
Current - Collector Cutoff (Max):10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 4A, 4V
Power - Max:1.75 W
Frequency - Transition:4MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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