EPC2101

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Part No :

EPC2101

Manufacturer
EPC
Description
GAN TRANS ASYMMETRICAL HALF BRID
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Jul 01 - Jul 05 2025
DataSheet
EPC2101 PDF
Availability
714 pieces
Unit Price
$7.03000

Current price of EPC2101 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:9.5A, 38A
Rds On (Max) @ Id, Vgs:11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Vgs(th) (Max) @ Id:2.5V @ 3mA, 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs:2.7nC @ 5V, 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:300pF @ 30V, 1200pF @ 30V
Power - Max:-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Die
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