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SIZF906BDT-T1-GE3

SIZF906BDT-T1-GE3

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Part No :

SIZF906BDT-T1-GE3

Manufacturer
Vishay / Siliconix
Description
DUAL N-CHANNEL 30 V (D-S) MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Jul 01 - Jul 05 2025
DataSheet
SIZF906BDT-T1-GE3 PDF
Availability
0 pieces
Unit Price
$1.73000

Current price of SIZF906BDT-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIZF906BDT-T1-GE3 Specifications
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual), Schottky
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Rds On (Max) @ Id, Vgs:2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:49nC @ 10V, 165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1630pF @ 15V, 5550pF @ 15V
Power - Max:4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerWDFN
Supplier Device Package:8-PowerPair® (6x5)
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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