SIA910EDJ-T1-GE3

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Part No :: SIA910EDJ-T1-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET 2N-CH 12V 4.5A SC-70-6

Catalog: Transistors - FETs, MOSFETs - Arrays

Shipped from: HK warehouse

Expected Shipping Date: Jun 30 - Jul 04 2025

DataSheet: SIA910EDJ-T1-GE3 PDF

Availability: 22614 pieces

Unit Price: ~~$0.62000~~

Current price of SIA910EDJ-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIA910EDJ-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	12V
Current - Continuous Drain (Id) @ 25°C:	4.5A
Rds On (Max) @ Id, Vgs:	28mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:	455pF @ 6V
Power - Max:	7.8W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	PowerPAK® SC-70-6 Dual
Supplier Device Package:	PowerPAK® SC-70-6 Dual

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