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EPC2110ENGRT

EPC2110ENGRT

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Part No :

EPC2110ENGRT

Manufacturer
EPC
Description
GAN TRANS 2N-CH 120V BUMPED DIE
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Jul 01 - Jul 05 2025
DataSheet
EPC2110ENGRT PDF
Availability
0 pieces
Unit Price
$2.37000

Current price of EPC2110ENGRT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

EPC2110ENGRT Specifications
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual) Common Source
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):120V
Current - Continuous Drain (Id) @ 25°C:3.4A
Rds On (Max) @ Id, Vgs:60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id:2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:80pF @ 60V
Power - Max:-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Die
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  • Delivery date: usually 2 to 7 working days.
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