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Type | Description |
---|---|
Series: | Z-FET™ |
Package: | Bulk |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 423A (Tc) |
Rds On (Max) @ Id, Vgs: | 5.7mOhm @ 300A, 20V |
Vgs(th) (Max) @ Id: | 2.3V @ 15mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs: | 1025nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 11700pF @ 600V |
Power - Max: | 1660W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module, Screw Terminals |
Supplier Device Package: | Module |
MOSFET 2N-CH 1200V 404A MODULE
IC MULTIPLEXER 1CH 38TSSOP
RF EMI SHIELDING TAPE 18'X3"
RS-FCN40S-L4 FUJITSU INTERFA