SIZ200DT-T1-GE3

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Part No :: SIZ200DT-T1-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH DUAL 30V

Catalog: Transistors - FETs, MOSFETs - Arrays

Shipped from: HK warehouse

Expected Shipping Date: Jul 01 - Jul 05 2025

DataSheet: SIZ200DT-T1-GE3 PDF

Availability: 765 pieces

Unit Price: ~~$1.08000~~

Current price of SIZ200DT-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIZ200DT-T1-GE3 Specifications

Type	Description
Series:	TrenchFET® Gen IV
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs:	5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	28nC @ 10V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	1510pF @ 15V, 1600pF @ 15V
Power - Max:	4.3W (Ta), 33W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerWDFN
Supplier Device Package:	8-PowerPair® (3.3x3.3)

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