SI5902BDC-T1-GE3

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Part No :: SI5902BDC-T1-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET 2N-CH 30V 4A 1206-8

Catalog: Transistors - FETs, MOSFETs - Arrays

Shipped from: HK warehouse

Expected Shipping Date: Jul 02 - Jul 06 2025

DataSheet: SI5902BDC-T1-GE3 PDF

Availability: 21385 pieces

Unit Price: ~~$1.38000~~

Current price of SI5902BDC-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SI5902BDC-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	4A
Rds On (Max) @ Id, Vgs:	65mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	220pF @ 15V
Power - Max:	3.12W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	1206-8 ChipFET™

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