CSD85312Q3E

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Part No :: CSD85312Q3E

Manufacturer: Texas Instruments

Description: MOSFET 2N-CH 20V 39A 8VSON

Catalog: Transistors - FETs, MOSFETs - Arrays

Shipped from: HK warehouse

Expected Shipping Date: Jul 01 - Jul 05 2025

DataSheet: CSD85312Q3E PDF

Availability: 3607 pieces

Unit Price: ~~$0.99000~~

Current price of CSD85312Q3E is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

CSD85312Q3E Specifications

Type	Description
Series:	NexFET™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	2 N-Channel (Dual) Common Source
FET Feature:	Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	39A
Rds On (Max) @ Id, Vgs:	12.4mOhm @ 10A, 8V
Vgs(th) (Max) @ Id:	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	2390pF @ 10V
Power - Max:	2.5W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerVDFN
Supplier Device Package:	8-VSON (3.3x3.3)

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