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BSM180D12P2C101

BSM180D12P2C101

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Part No :

BSM180D12P2C101

Manufacturer
ROHM Semiconductor
Description
MOSFET 2N-CH 1200V 180A MODULE
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Jul 28 - Aug 01 2025
DataSheet
BSM180D12P2C101 PDF
Availability
9 pieces
Unit Price
$439.36000

Current price of BSM180D12P2C101 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSM180D12P2C101 Specifications
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:204A (Tc)
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:23000pF @ 10V
Power - Max:1130W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:-
Package / Case:Module
Supplier Device Package:Module
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