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Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | 6 N-Channel (3-Phase Bridge) |
FET Feature: | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 251A (Tc) |
Rds On (Max) @ Id, Vgs: | 10.4mOhm @ 120A, 20V |
Vgs(th) (Max) @ Id: | 2.8V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: | 696nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 9060pF @ 1000V |
Power - Max: | 1.042kW (Tc) |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | SP6-P |
MOSFET 2N-CH 60V 0.51A SOT26
PM-MOSFET-SIC-SBD~-SP6P
WE866C3-P WIFI 11A,C / BLE 4.2 C
GATEWAY MODBUS RS-232/485