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FF11MR12W1M1B11BOMA1

FF11MR12W1M1B11BOMA1

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Part No :

FF11MR12W1M1B11BOMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 1200V 100A MODULE
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Jul 10 - Jul 14 2025
DataSheet
FF11MR12W1M1B11BOMA1 PDF
Availability
24 pieces
Unit Price
$165.53000

Current price of FF11MR12W1M1B11BOMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

FF11MR12W1M1B11BOMA1 Specifications
Type Description
Series:CoolSiC™+
Package:Tray
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:100A
Rds On (Max) @ Id, Vgs:11mOhm @ 100A, 15V
Vgs(th) (Max) @ Id:5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs:250nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:7950pF @ 800V
Power - Max:-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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