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FF8MR12W2M1B11BOMA1

FF8MR12W2M1B11BOMA1

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Part No :

FF8MR12W2M1B11BOMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 1200V AG-EASY2BM-2
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Jul 25 - Jul 29 2025
DataSheet
FF8MR12W2M1B11BOMA1 PDF
Availability
45 pieces
Unit Price
$248.29000

Current price of FF8MR12W2M1B11BOMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

FF8MR12W2M1B11BOMA1 Specifications
Type Description
Series:CoolSiC™+
Package:Tray
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V
Current - Continuous Drain (Id) @ 25°C:150A (Tj)
Rds On (Max) @ Id, Vgs:7.5mOhm @ 150A, 15V (Typ)
Vgs(th) (Max) @ Id:5.55V @ 60mA
Gate Charge (Qg) (Max) @ Vgs:372nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:11000pF @ 800V
Power - Max:20mW (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:AG-EASY2BM-2
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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