APTM100VDA35T3G

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Part No :: APTM100VDA35T3G

Manufacturer: Microsemi

Description: MOSFET 2N-CH 1000V 22A SP3

Catalog: Transistors - FETs, MOSFETs - Arrays

Shipped from: HK warehouse

Expected Shipping Date: Jul 06 - Jul 10 2025

DataSheet: APTM100VDA35T3G PDF

Availability: 0 pieces

Unit Price: ~~$0.00000~~

Current price of APTM100VDA35T3G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

APTM100VDA35T3G Specifications

Type	Description
Series:	POWER MOS 7®
Package:	Bulk
Part Status:	Obsolete
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	1000V (1kV)
Current - Continuous Drain (Id) @ 25°C:	22A
Rds On (Max) @ Id, Vgs:	420mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:	5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:	186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	5200pF @ 25V
Power - Max:	390W
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SP3
Supplier Device Package:	SP3

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