IPI65R190CFDXKSA1

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Part No :: IPI65R190CFDXKSA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 650V 17.5A TO262-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: May 18 - May 22 2024

DataSheet: IPI65R190CFDXKSA1 PDF

Availability: 0 pieces

Unit Price: ~~$2.00006~~

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of IPI65R190CFDXKSA1 is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

IPI65R190CFDXKSA1 Specifications

Type	Description
Series:	CoolMOS™
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs:	68 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1850 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	151W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO262-3
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

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