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TK100E06N1,S1X

TK100E06N1,S1X

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Part No :

TK100E06N1,S1X

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N CH 60V 100A TO-220
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 07 - Jul 11 2025
DataSheet
TK100E06N1,S1X PDF
Availability
0 pieces
Unit Price
$2.62000

Current price of TK100E06N1,S1X is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

TK100E06N1,S1X Specifications
Type Description
Series:U-MOSVIII-H
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:140 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10500 pF @ 30 V
FET Feature:-
Power Dissipation (Max):255W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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