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BSM600C12P3G201

BSM600C12P3G201

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Part No :

BSM600C12P3G201

Manufacturer
ROHM Semiconductor
Description
SICFET N-CH 1200V 600A MODULE
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 06 - Jul 10 2025
DataSheet
BSM600C12P3G201 PDF
Availability
3 pieces
Unit Price
$1200.00000

Current price of BSM600C12P3G201 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSM600C12P3G201 Specifications
Type Description
Series:-
Package:Tray
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:600A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:5.6V @ 182mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds:28000 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2460W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:Module
Package / Case:Module
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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