IPN50R3K0CEATMA1

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Part No :: IPN50R3K0CEATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 500V 2.6A SOT223

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: May 18 - May 22 2024

DataSheet: IPN50R3K0CEATMA1 PDF

Availability: 14496 pieces

Unit Price: ~~$0.54000~~

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of IPN50R3K0CEATMA1 is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

IPN50R3K0CEATMA1 Specifications

Type	Description
Series:	CoolMOS™ CE
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	500 V
Current - Continuous Drain (Id) @ 25°C:	2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	13V
Rds On (Max) @ Id, Vgs:	3Ohm @ 400mA, 13V
Vgs(th) (Max) @ Id:	3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:	4.3 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	84 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	5W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-SOT223
Package / Case:	SOT-223-3

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